# Power MOSFET, P Channel, 100 V, 680 mA, 1.8 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2212910/)

**URL**: https://novapart.co/products/BSP316P%20L6327/power-mosfet-p-channel-100-v-680-ma-18-ohm-sot-223
**SKU**: BSP316P L6327
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1880
**Stock**: 10+

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-680mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 4Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 680mA |
| Drain Source On State Resistance | 1.8ohm |
| Gate Source Threshold Voltage Max | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2212910/)

**BSP316P** 

## **SIPMOS[] Small-Signal-Transistor** 

|**Small-Signal-Transistor**<br>**Feature**|**Small-Signal-Transistor**|||||**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**||
|---|---|---|---|---|---|---|---|---|---|---|
|**Feature**|||||||||||
|•P-Channel||||||_V_DS||-100|V||
|•Enhancement mode||||||_R_DS(on)<br>1.8|||Ω||
|•Logic Level||||||_I_D||-0.68|A||
|•d_v_/d_t_rated||||||||PG-SOT223-4-1|||
|•Qualified according to AEC Q101<br>¢ Pb-free lead plating; ROHS compliant<br>ZL RoHS<br>><br>AEE||Gate<br>pin1<br>Drain<br>pin 2/4<br>Source<br>pin 3<br>a||||||“os<br>4<br>eafanan|||
|**Type**<br>**Package**|**Tape and Reel Information**||**Marking**|||||**Packaging**|||
|BSP316P<br>PG-SOT223-4-1|L6327: 1000pcs/reel||BSP316P|||||Non dry|||



## **Feature** 

- P-Channel 

- Enhancement mode 

- Logic Level 

- d _v_ /d _t_ rated 

- ¢ Pb-free lead plating; ROHS • Qualified according to AEC Q101 ZL RoHS > 

## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified 

|**Maximum Ratingsgss**, atat_T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified||
|---|---|---|---|
|j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**|
|Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D|-0.68<br>-0.54|A|
|Pulsed drain current<br>_T_A=25°C|_I_D puls|-2.72||
|Reverse diode d_v_/d_t_<br>_I_S=-0.68A,_V_DS=-48V, d_i_/d_t_=-200A/µs,_T_jmax=150°C|d_v_/d_t_|6|kV/µs|
|Gate source voltage|_V_GS|±20|V|
|Power dissipation<br>_T_A=25°C|_P_tot|1.8|W|
|Operatingand storage temperature|_T_j , _T_stg|-55... +150|°C|
|IEC climatic category; DIN IEC 68-1|j ,stg|55/150/56||
|ESD Class<br>JESD22-A114-HBM||Class 1a||



2008-03-27 

Rev.1.7 Page 1 

**BSP316P** 

**Thermal Characteristics** 

|**Thermal Characteristics**<br>||||||
|---|---|---|---|---|---|
|**Parameter**<br>**Characteristics**<br>~~ee ~~|**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|||||
|Thermal resistance, junction - soldering point|_R_thJS|-|15|25|K/W|
|(Pin 4)||||||
|SMD version, device on PCB:|_R_thJA|||||
|@ min. footprint||-|80|115||
|@ 6 cm2cooling area1)||-|48|70||



|Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>~~p~~<br>~~|~~|_V_(BR)DSS<br>~~p~~t<br>~~|~~|tt|-100<br>ttf<br>tt|-<br>tf<br>tt|-<br>tf<br>tt|V|
|---|---|---|---|---|---|
|Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-170µA<br>~~p~~<br>~~|~~|_V_GS(th)<br>~~p~~t<br>~~|~~|tt|-1<br>t tf<br>tt|-1.5<br>tf<br>tt|-2<br>tf<br>tt||
|Zero gate voltage drain current<br>_V_DS=-100V,_V_GS=0,_T_j=25°C<br>_V_DS=-100V,_V_GS=0,_T_j=150°C<br>~~|~~<br>~~t~~<br>~~|~~|_I_DSS<br>~~|~~ |tt<br>~~t~~<br>~~|~~<br>||-<br>-<br>tt<br>~~t~~ty<br>**|**|-0.1<br>-10<br>tt<br>ty|-0.2<br>-100<br>tt<br>ty|µA|
|Gate-source leakage current<br>_V_GS=-20V,_V_DS=0<br>~~|~~<br>~~p~~|_I_GSS<br>~~|~~<br>|<br>~~p~~<br>~~|tt~~|-<br>**|**<br>~~tt~~|-10<br>~~tt~~|-100<br>~~tt~~|nA|
|Drain-source on-state resistance<br>_V_GS=-4.5V,_I_D=-0.61A<br>~~|~~<br>~~p~~|_R_DS(on)<br>~~|~~<br>|<br>~~p~~<br>~~|tt~~|-<br>**|**<br>~~tt~~|1.5<br>~~tt~~|2.3<br>~~tt~~|Ω|
|Drain-source on-state resistance<br>_V_GS=-10V,_I_D=-0.68A<br>~~p~~<br>~~|~~|_R_DS(on)<br>~~p~~<br>~~|tt~~<br>~~| ~~|-<br>~~tt~~<br> ~~tt~~|1.4<br>~~tt~~<br>~~tt~~|1.8<br>~~tt~~<br>~~tt~~||



1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 

2008-03-27 

Rev.1.7 Page 2 

|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|
|---|---|---|---|---|---|---|---|---|---|
|**Dynamic Characteristics**||||||||||
|Transconductance||_g_fs<br>|_V_DS|≥2*|_I_D|*_R_DS(on)max,<br>_I_D=-0.54A<br>0.5<br>1<br>-<br>~~|~~|||||||S|
|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delaytime<br>Rise time<br>Turn-off delaytime<br>Fall time||_C_iss<br>_V_GS=0,_V_DS=-25V,<br>_f_=1MHz<br>-<br>117<br>146<br>_C_oss<br>-<br>27.7<br>34.5<br>_C_rss<br>-<br>12<br>15<br>_t_d(on)<br>_V_DD=-50V,_V_GS=-10V,<br>_I_D=-0.68A,_R_G=6Ω<br>-<br>4.7<br>7<br>_t_r<br>-<br>7.5<br>11.2<br>_t_d(off)<br>-<br>67.4<br>101<br>_t_f<br>-<br>25.9<br>38.9<br>SEE<br>~~=—~~i~~===~~|||||||pF<br>ns|
|**Gate Charge Characteristics**||||||||||
|Gate to source charge|||_Q_gs||_V_DD=-80V,_I_D=-0.68A|-|-0.2|-0.3|nC|
|Gate to drain charge|||_Q_gd|||-|-1.87|-2.8||
|Gate charge total|||_Q_g||_V_DD=-80V,_I_D=-0.68A,|-|-5.1|-6.4||
||||||_V_GS=0 to -10V|||||
|Gateplateau voltage|||_V_(plateau)||_V_DD=-80V,_I_D=-0.68A|-|-2.7|-|V|
|**Reverse Diode**||||||||||
|Inverse diode continuous|||_I_S||_T_A=25°C|-|-|-0.68|A|
|forward current||||||||||
|Inv. diode direct current, pulsed|||_I_SM|||-|-|-2.72||
|Inverse diode forward voltage|||_V_SD||_V_GS=0,_I_F=-0.68A|-|-0.85|-1.2|V|
|Reverse recoverytime|||_t_rr||_V_R=-50V,_I_F=_l_S,|-|44.2|55.3|ns|
|Reverse recoverycharge|||_Q_rr||d_i_F/d_t_=100A/µs|-|56.3|70.4|nC|



2008-03-27 

Rev.1.7 Page 3 

**BSP316P** 

## **1 Power dissipation** 

## _P_ tot = _f_ ( _T_ A) 

## **2 Drain current** 

_I_ D = _f_ ( _T_ A) 

parameter: | _V_ GS| ≥ 10V 

**==> picture [488 x 605] intentionally omitted <==**

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## **3 Safe operating area** 

_I_ D == _f_ ( _V_ DS ) ) 

parameter : _D_ = 0 , _T_ A = 25°C 

Rev.1.7 Page 4 

2008-03-27 

**BSP316P** 

## **5 Typ. output characteristic** 

## **6 Typ. drain-source on resistance** 

_I_ D = _f_ ( _V_ DS) 

_R_ DS(on) = _f_ ( _I_ D) 

parameter: _T_ j =25°C, - _V_ GS 

parameter: _T_ j =25°C, - _V_ GS 

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## **7 Typ. transfer characteristics** 

_I_ D== _f_ ( _V_ GS ); | ); | _V_ DS|≥ 2 x |≥ 2 x | 2 x | _I_ D| x | x _R_ DS(on)max parameter: _T_ j = 25 °C = 25 °C 

Rev.1.7 Page 5 

2008-03-27 

**BSP316P** 

## **9 Drain-source on-state resistance** 

_R_ DS(on) = _f_ ( _T_ j) 

parameter : _I_ D = -0.68 A, _V_ GS = -10 V 

## **10 Typ. gate threshold voltage** 

_V_ GS(th) = _f_ ( _T_ j) 

parameter: _V_ GS = _V_ DS 

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## **11 Typ. capacitances** 

## _C_ = _f_ ( _V_ DS) 

parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25 °C 

## **12 Forward character. of reverse diode** 

_I_ F = _f_ (VSD) 

parameter: _T_ j 

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Rev.1.7 Page 6 

2008-03-27 

**BSP316P** 

## **13 Typ. gate charge** 

_V_ GS = _f_ ( _Q_ Gate) 

## **14 Drain-source breakdown voltage** 

_V_ (BR)DSS = _f_ ( _T_ j) 

parameter: _I_ D = -0.68 A pulsed, _T_ j = 25 °C 

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2008-03-27 

Rev.1.7 Page 7 

**BSP316P** 

2008-03-27 

Rev.1.7 Page 8 



## Links

- [View this product on Novapart](https://novapart.co/products/BSP316P%20L6327/power-mosfet-p-channel-100-v-680-ma-18-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/bsp316p-l6327/mosfet-p-ch-100v-680ma-sot-223/dp/2212910)
---

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